Solar cell element and method for manufacturing solar cell element

摘要

A solar cell element includes a semiconductor substrate which includes a first semiconductor region positioned on a first main surface and a second semiconductor region in a surface layer portion of a second main surface, and an electrode in line shape disposed on the second main surface. The second semiconductor region includes a first concentration region being separated from the electrode by a predetermined distance in plan view, and a second concentration region including a high concentration region where a dopant concentration is higher than that in the first concentration region and exists along a longitudinal direction of the electrode.

主权项

1. A solar cell element, comprising:
a semiconductor substrate which includes a first conductivity type first semiconductor region positioned on a first main surface, and a second conductivity type second semiconductor region which is different from the first conductivity type in a surface layer portion of a second main surface positioned on an opposite side to the first main surface; and an electrode in line shape which is disposed on the second main surface of the semiconductor substrate, wherein the second semiconductor region includes a first concentration region which exists at a position separated from the electrode by a predetermined distance in plan view, and a second concentration region which includes a high concentration region where a dopant concentration is higher than that in the first concentration region and exists along a longitudinal direction of the electrode, and wherein the second concentration region includes a part in which a minimum place which has a minimum value of a dopant concentration difference and a maximum place which has a maximum value of the dopant concentration difference alternately and repeatedly exist along the longitudinal direction of the electrode and in which a minimum place interval of adjacent minimum places in the longitudinal direction of the electrode varies; wherein the dopant concentration difference is calculated by subtracting a dopant concentration value of the first concentration region at a first place from a dopant concentration value of the second concentration region at a second place; and wherein the first place is close to the second place.