ESD transistor for high voltage and ESD protection circuit thereof

摘要

An ESD transistor and an ESD protection circuit thereof are provided. An ESD transistor includes a collector region disposed on a surface of a substrate, a sink region disposed vertically below the collector region, and a buried layer protruding horizontally further than the sink region under the sink region.

主权项

1. An ESD transistor, comprising:
a collector region disposed on a surface of a substrate; a sink region disposed vertically below the collector region; a buried layer protruding horizontally further than the sink region under the sink region; an emitter region spaced apart from a base contact region in a base region; and a first insulating film disposed between the emitter region and the base contact region, wherein the ESD transistor is a bipolar junction transistor.