One-time programmable memory and method for making the same

摘要

A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate. Among others, features include forming the gate lines with polysilicon layers of one conductivity type and the intersecting lines with dopants of the opposite conductivity type in the substrate; forming the intersecting lines with differing dopant concentrations near the substrate surface and deeper in the substrate; and forming the widths of the gate lines and intersecting lines with the minimum feature size that can be patterned by a particular semiconductor technology.

主权项

1. A method of manufacturing a one-time programmable non-volatile memory cell comprising:
forming a buried bitline in a substrate, the buried bitline of a first conductivity type; forming a dielectric layer over at least a portion of the buried bitline; forming a polysilicon gate layer over at least a portion of the dielectric layer; doping the polysilicon gate layer to cause the polysilicon gate layer to be a second conductivity type; and after the doping, etching the polysilicon gate layer to form a conductive gate over the dielectric layer, the conductive gate formed over a channel region under the conductive gate and dielectric layer.