Deep well implant using blocking mask

摘要

Various methods include: forming an opening in a resist layer to expose a portion of an underlying blocking layer; performing an etch on the exposed portion of the blocking layer to expose a portion of an etch stop layer, wherein the etch stop layer resists etching during the etch of the exposed portion of the blocking layer; etching the exposed portion of the etch stop layer to expose a portion of a substrate below the exposed portion of the etch stop layer and leave a remaining portion of the etch stop layer; and ion implanting the exposed portion of the substrate, wherein the blocking layer prevents ion implanting of the substrate outside of the exposed portion.

主权项

1. A method comprising:
forming an opening in a resist layer to expose a portion of an underlying blocking layer, the blocking layer overlying an etch stop layer overlying a substrate, wherein a developable bottom anti-reflective coating (DBARC) layer lies over the blocking layer and under the resist layer; etching the exposed portion of the blocking layer, exposing a portion of the etch stop layer below the etched portion of the blocking layer, wherein the etch stop layer resists etching during the etching of the exposed portion of the blocking layer; etching the exposed portion of the etch stop layer to expose a portion of the substrate below the etched portion of the etch stop layer; ion implanting the exposed portion of the substrate, wherein the blocking layer prevents implanting of the substrate outside of the exposed portion; stripping the resist layer and the DBARC to expose an upper surface of the blocking layer prior to the etching of the exposed portion of the etch stop layer; and stripping the blocking layer and the etch stop layer after the ion implanting.