| 摘要 |
<p>A mask for shifting a phase used in a photolithographic process of forming a wiring pattern. A pattern (12) for blocking light is formed selectively on a transparent mask substrate (11). Also, two kinds of shifters (13a, 13b) are provided at transparent parts adjoining to the pattern for blocking light. The difference in phase between the shifters and the transparent mask substrate are both 90° and the phase difference between the shifters is 180°. Since the phase difference between the both phase shifters is 180°, the resolution is high, and further, since the phase diferences from the transparent mask substrate being 90°, unnecessary patterns are not transferred at the edge parts of the shifters.</p> |
