SUBSTRATE PROCESSING APPARATUS, METHOD FOR CLEANING AND OPERATING THE SAME

摘要

The present invention relates to a substrate processing apparatus and a method for cleaning and operating the same, and more specifically, to a substrate processing apparatus and a method for cleaning and operating the same which can effectively clean a deposition byproduct created when depositing an inorganic film and an organic film in situ. According to an embodiment of the present invention, the substrate processing apparatus comprises: a chamber in which chemical vapor deposition of a thin film is performed; a shower head provided on the chamber to distribute process gas for the deposition; a substrate support which is provided in the chamber, and supports a substrate on which the thin film is deposited; a remote plasma supply source to dissociate first etching gas outside the chamber to form a plasma, and supply the plasma of the first etching gas to the shower head through a first supply line; and an ozone generator to generate ozone to supply the ozone to the shower head.