发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND HEATING UNIT |
摘要 |
The present invention is to shorten a temperature settling time in a processing path. A substrate processing apparatus comprises: a substrate holding unit for holding a plurality of substrates; an insulating unit installed on the lower side of the substrate holding unit; a processing room for containing the substrate holding unit and processing the plurality of substrates; a first heating unit installed around the processing room and heating the inside of the processing room on a side; a second heating unit installed between the substrate holding unit and the heating unit within the processing room. The second heating unit includes a substantially ring-shaped exothermic unit, and a loading unit extended from the heating unit downwards. The exothermic unit is contained in a ring-shaped area having a smaller diameter than the substrate. |
申请公布号 |
KR20160103928(A) |
申请公布日期 |
2016.09.02 |
申请号 |
KR20160017774 |
申请日期 |
2016.02.16 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MURATA HITOSHI;WADA YUICHI;YAHATA TAKASHI;YOSHIDA HIDENARI;SAIDO SHUHEI |
分类号 |
H01L21/22;H01L21/324;H01L21/54;H01L21/66;H01L21/67;H01L21/673 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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