发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND HEATING UNIT
摘要 The present invention is to shorten a temperature settling time in a processing path. A substrate processing apparatus comprises: a substrate holding unit for holding a plurality of substrates; an insulating unit installed on the lower side of the substrate holding unit; a processing room for containing the substrate holding unit and processing the plurality of substrates; a first heating unit installed around the processing room and heating the inside of the processing room on a side; a second heating unit installed between the substrate holding unit and the heating unit within the processing room. The second heating unit includes a substantially ring-shaped exothermic unit, and a loading unit extended from the heating unit downwards. The exothermic unit is contained in a ring-shaped area having a smaller diameter than the substrate.
申请公布号 KR20160103928(A) 申请公布日期 2016.09.02
申请号 KR20160017774 申请日期 2016.02.16
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MURATA HITOSHI;WADA YUICHI;YAHATA TAKASHI;YOSHIDA HIDENARI;SAIDO SHUHEI
分类号 H01L21/22;H01L21/324;H01L21/54;H01L21/66;H01L21/67;H01L21/673 主分类号 H01L21/22
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