| 摘要 |
PURPOSE:To allow a semiconductor device to make high-speed operations by making a channel completely depleted with a polycrystalline-silicon gate electrode of the same conductivity type as that of the channel and a high- concentration area immediately below the channel. CONSTITUTION:A storage capacitance is formed of an n<+> polysilicon film 13'', thin oxide film 13, and electrode 32 of A, etc. A gate electrode 14' is provided with p<+> polysilicon on a gate oxide film and Pt on the polysilicon so as to lower the resistance of a word line. In addition, the electrode 14' is provided with a p<+> area formed below and adjacently to an n<+> area 13 in order to improve the holding characteristics and storage capacitance. Then a channel area is formed to a layer which is almost completely depleted under a condition where no gate voltage is applied and a potential barrier which controls a main current is formed near a source area, and then, the clearance between a source and drain is set shorter than 1mum. Therefore, a normally-off MOS transistor which can make high-speed operations and a semiconductor device which is an integrated circuit using the transistor can be obtained. |
