| 摘要 |
PURPOSE:To solve the problem of inferior formation of a bit line due to the high aspect ratio of a contact hole without increasing the number of processes by forming the pattern of a conductive film on a contact hole section for connecting bit lines by utilizing the conductive film for forming the electrode of a capacitor. CONSTITUTION:Contact holes 30a and 30b are formed through the first interlayer insulating film 28 formed on the entire surface of a substrate including the area of a transfer gate transistor on a pair of diffusion layers 27a and 27b and an oxide film 29 on the surface of the substrate below the film 28. After the holes 30a and 30b, a conductive film 31 and dielectric film 32 are successively formed on the entire surface of the substrate and patterning is performed on both of the films 32 and 31. Then an electric charge accumulating electrode 33 and dielectric film 32a which are connected with one diffusion layer 27a are formed through one contact hole 30a and, at the same time, the pattern 34 of the dielectric and conductive films 32 and 31 is formed in the central part of the other contact hole 30b. Therefore, the aspect ratio of the contact holes for connecting bit lines can be reduced, because the holes can be formed with shallower depths and larger apertures, and bit lines can excellently be formed without causing any disconnection. |
