发明名称 FERROELECTRIC CAPACITOR AND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To store a large electric charge in a small area by providing a first electrode and a second electrode which are filled into a plurality of groove parts opened so as to sandwich a ferroelectric in the thickness direction of a ferroelectric layer formed on a substrate and which face each other so as to sandwich the ferroelectric. CONSTITUTION:The surface of a silicon substrate 11 is covered with a silicon oxide film 12; the film is covered with a buffer layer 13 composed of MgO as an insulating film. The buffer layer 13 is covered with a ferroelectric layer 14 composed of lead titanate zirconate. A plurality of sets of two rectangular- pillar-shaped groove parts 15a, 15b are opened in the ferroelectric layer 14. The individual groove parts 15a, 15b are filled with electrodes 16a, 16b composed of metal tungsten. Ends on one side of wiring 17a, 17b arranged and installed on the ferroelectric layer 14 are connected respectively to a plurality of sets of the electrodes 16a, 16b exposed on the surface of the ferroelectric layer 14; and ends on the other side are used in common by wiring a line. Thereby, a large electric charge can be stored in a small area.
申请公布号 JPH03293775(A) 申请公布日期 1991.12.25
申请号 JP19900320987 申请日期 1990.11.27
申请人 TOSHIBA CORP 发明人 ABE KAZUHIDE;TOYODA HIROSHI;YAMAKAWA KOJI;IMAI MOTOMASA;HARADA MITSUO;SAKUI YASUSHI
分类号 G11C11/22;H01G7/06;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/112;H01L29/788;H01L29/792 主分类号 G11C11/22
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