PRODUCTION OF THIN-FILM ACTIVE ELEMENT

摘要

PURPOSE:To continuously execute the entire stage of thin film formation with the same device and to simplify the stages by executing sputtering vapor deposition in entire stage of the thin film formation. CONSTITUTION:A transparent electrode layer 12, a boron atom layer 13, an amorphous Si semiconductor layer 14, a phosphorus atom layer 15, and a metallic electrode layer 16 are successively formed under prescribed sputtering vapor deposition conditions on an insulating base body 11. These layers are then heat treated for about one hour at about 300 deg.C under irradiation with UV rays. Plannar targets for sputtering are prepd. for each of respective materials and the sputtering vapor deposition is executed successively from the transparent electrode 12 to the metallic electrode 16 within the same device when the thin films are formed continuously by the sputter method. The materials are crossdiffused near the boundary between the atom layer 13 and the Si layer 14 and near the boundary between the atom layer 15 and the Si layer 14 by this heat treatment. The P type amorphous Si layer 23 and the N type amorphous Si layer 25 are formed in the region near both regions.