发明名称 |
SELENIUM ELECTROPHOTOGRAPHIC PHOTORECEPTOR |
摘要 |
The present invention provides a seleniumn electrophotographic photoreceptor comprising a laminate of a conductive base, a carrier transportaion layer consisting of amorphous selenium or an amorphous Se-Te alloy, a carrier generation layer consisting of an amorphous Se-Te alloy containing 20 to 50 wt % of Te, and an overcoat layer composed of two layers consisting of Se-As alloys having different arsenic concentrations and different thickenesses. In one embodiment of the invention, the lower overcoat layer contains 2-10% by weight arsenic while the upper overcoat layer contains 10-30% by weight arsenic. In another embodiment of the invention, the thickness of the upper overcoat layer is greater than that of the lower overcoat layer but not more than 8 mu m.
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申请公布号 |
US5075188(A) |
申请公布日期 |
1991.12.24 |
申请号 |
US19900472626 |
申请日期 |
1990.01.30 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KASAHARA, MASAHIKO;TANAKA, TATSUO;NARITA, MITSURU |
分类号 |
G03G5/08;G03G5/043;G03G5/082;G03G5/147 |
主分类号 |
G03G5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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