SEMICONDUCTOR-TYPE LAMINATED CERAMIC CAPACITOR WITH A GRAIN BOUNDARY-INSULATED STRUCTURE AND A METHOD FOR PRODUCING THE SAME

摘要

PCT No. PCT/JP90/00185 Sec. 371 Date Sep. 28, 1990 Sec. 102(e) Date Sep. 28, 1990 PCT Filed Feb. 16, 1990 PCT Pub. No. WO90/09671 PCT Pub. Date Aug. 23, 1990.A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of SrTiO3 as the main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of the ceramic capacitor together with the materials of inner electrodes has been made possible in the manufacturing process. A material to be made semiconducting is added to the main component of SrTiO3 with an excess in Ti, the materials of Mn-Si, which are converted to MnO2 and SiO2 in the sintering process are also added to the main component.