| 摘要 |
PURPOSE:To prevent the peeling of a bonding pad from being generated by a method wherein a metal film, which is one part of the bonding pad part and is alloyed or made compatible with the surface of a semiconductor substrate, is provided on the surface of the substrate. CONSTITUTION:A spacer insulating film 5 consisting of silicon dioxide and an alloyed or compatible metal precurson film 2, which consists of AuGe and Au and is a bonding pad part, are applied on a gallium-arsenic substrate 1 by vacuum deposition and are heat-treated. The ohmic metal film 2 is alloyed or made compatible with the surface of the substrate 1 by the heat treatment. Gate metal films 3, which are made to penetrate the film 5 and consist of Ti and Al, are formed and are applied on the substrate by vacuum deposition. Then, a surface protective film 6, which consists of silicon dioxide, is applied on the substrate 1, the alloyed or compatible metal film 2, the films 3 and the film 5 by a thermal CVD method, the film 6 is subjected to perforating work with a hydrofluoric acid, a wiring metal film 4 is applied on the films 3 by vacuum deposition and a field-effect transistor is obtained. |
