| 摘要 |
<p>PURPOSE:To make the interface of an insulating thin film clean and to restrain the interface level of the thin film so as to enable a thin film transistor to be lowered in power consumption and to operate at a high speed by a method wherein an insulating film is formed and then irradiated with ozone. CONSTITUTION:A semiconductor thin film layer highly doped with impurities is laminated on all the surface of an insulating substrate 101 and patterned into a source region and a drain region 102. Then, an intrinsic semiconductor layer 103 with no impurity is laminated through the thermal decomposition of silane or the like apd patterned. In succession, an insulating film 104 serving as a gate insulating film is laminated on the whole surface. The insulating film 104 is subjected to an ozone irradiation treatment, then a conductor thin film layer serving as a gate electrode is formed through a sputtering method and etched into a gate electrode 105 by removing the disused part of the conductor thin film, an interlaminar insulating film 106 is laminated thereon, the insulating thin film 104 and the interlaminar insulating film 106 on a region where a source and a drain electrode are built are removed to provide a contact hole 107, and a source electrode 108 and a drain electrode 109 are provided there.</p> |
