| 摘要 |
PURPOSE:To obtain a semiconductor device which is flat and in which a semiconductor thin wire can be formed in a straight shape or in an arbitrary shape. CONSTITUTION:An undoped Al0.3Ga0.7As layer 2, an undoped GaAs layer 3 and an undoped Al0.3Ga0.7As layer 4 are formed sequentially on a semiinsulating GaAs substrate 1 provided with a 100 plane. Then, this assembly is cleaved in the direction of a 110 plane perpendicular to the 100 plane; a section 5 which traverses the interface between the undoped Al0.3Ga0.7As layer 2 and the undoped GaAs layer 3 and the interface between the undoped GaAs layer 3 and the undoped Al0.3Ga0.7As layer 4 is formed. |
