TUNGSTEN SILICIDE SELF-ALIGNED FORMATION PROCESS

摘要

A process for forming tungsten or molybdenum silicide on silicon apparent regions (6) of a silicon wafer surface (1) also comprising oxidized regions (2) includes the steps consisting in uniformly coating the wafer with a tungsten or molybdenum layer (10) and annealing at a temperature ranging from 700 DEG C. to 1000 DEG C. The annealing step is carried out in presence of a low pressure gas forming a chemical composite with tungsten or molybdenum. The composite is then selectively etched.