| 摘要 |
PURPOSE:To separate an element positively without increasing manufacturing processes by a method wherein impurities are diffused from polycrystal silicon, and the polycrystal silicon is thermally treated, and changed into an oxide film. CONSTITUTION:A silicon oxide film 2 and a silicon nitride film 3 are formed onto a silicon substrate 1, and sections except an element forming region section are removed through etching. The polycrystal silicon layer 4 containing the impurities of the same conduction type as the substrate is shaped, the polycrystal silicon 4 of the element forming region is removed and a thermal oxide film 6 is molded. The nitride film 3 and the oxide film 2 of source and drain regions and a diffusion wiring region section are removed. Impurities are introduced to the source and drain regions while the regions are thermally oxidized, the impurities in the polycrytal silicon 4 are diffused and a channel stopper 5 is shaped, and the polycrystal silicon 4 is changed into the oxide film 9. |
