| 摘要 |
PURPOSE:To feed a doping gas into the epitaxial growth device while controlling the flow volume of the doping gas by feeding the doping gas of a gas cell from a sub-chamber through a mass flow controller. CONSTITUTION:In an ultrahigh vacuum silicone molecular ray epitaxial growth device, a silicon substrate is heated with a heater 3 disposed on the back side of the substrate at 900 deg.C for approximately 10min to prepare the clean Si surface (100). Disilane 6, a source gas for the growth of the silicon, is fed to the clean surface from the cell 7 of the source gas. The substrate is irradiated with the disilane source gas and a doping gas. Diborane is employed as the doping gas for doping boron. The diborane and the disilane for diluting the diborane are fed into a sub-chamber 13 while being controlled with the mass flow controller 11 of a doping gas line and with the mass flow controller 12 of a dilution gas line. The sub-chamber 13 is exhausted with a specific turbo molecular pump 14. |
