| 摘要 |
<p>A thin film device comprising a substrate and an oxide superconductor film formed thereon, wherein said oxide superconductor film comprises atomic monolayers each composed of at least one kind of element of the oxide superconductor, which are deposited substantially in a vertical direction to the substrate so that the pereodicy of the lattice structure of the oxide superconductor is substantially maintained, and at an intermediate portion of the oxide superconductor film, at least a part of the atoms of the oxide superconductor is substituted by other element in the lattice structure of the oxide superconductor to form a non-superconductor interlayer, and the pereodicy of the lattice structure of the oxide superconductor film is substantially maintained across the interface between the oxide superconductor and said non-superconductor interlayer.</p> |
