DIELECTRIC STRUCTURES WITH EMBEDDED MATERIAL RESISTANT TO ETCHING AND METHOD OF FABRICATION THEREOF

摘要

Structures containing a dielectric material (2) having a polymeric reactive ion etch (RIE) barrier (14) embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier (14) is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallocyclobutane, metallobutene and vinyl groups. The etch barrier (14) is deposited as a solvent free liquid which can fill gaps (30) between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.