Method for pulling up semiconductor single crystal.

摘要

A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the speed of revolution of the quartz glass crucible and varying the intensity of the magnetic field applied to the melt according to the length of pull-up of the single crystal rod.