发明名称 FORMATION OF OXIDE FILM BY MEANS OF COMBINED PLASMA
摘要 PURPOSE:To form a dense and uniform film of refractory material or a perovskite type oxide film chemically stable even at high temp. by thermally spraying raw-material oxide grains by means of a combined plasma in which high frequency plasma is superimposed on arc jet plasma. CONSTITUTION:At the time of forming a thin film of refractory material or of the oxide of perovskite, etc., chemically stable at high temp. by a plasma spraying method on a substrate on a substrate holding part 5 in a vacuum tank, O2 gas and inter gas of Ar, etc., are introduced via a gas introducing part 3 into a reaction chamber and high frequency induction coils 2 made of water-cooled Cu pipe are arranged on the outside periphery of a plasma arc torch 1 having a cathode made of W and an anode made of Cu, and high frequency plasma is superimposed on arc jet plasma, by which respective films of ZrO2, Y2O3, stabilized ZrO2, perovskite type oxides, such as LaCoO3 and LaCrO3, and oxides superconductors can easily be formed.
申请公布号 JPH03287754(A) 申请公布日期 1991.12.18
申请号 JP19900088071 申请日期 1990.04.02
申请人 YOSHIDA TOYONOBU 发明人 YOSHIDA TOYONOBU
分类号 C23C4/10;C23C4/12;H01M8/12;H01M8/14 主分类号 C23C4/10
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