| 摘要 |
<p>Disclosed is a wafer scale device 10, 201 on which is formed a layer of thin film as an interconnection system 203 with contact sites 202, 207 between the interconnection system 203 and die bonding sites 202 of the wafer 10, 201 to form a monolithic wafer. The interconnection system 203 has bonding sites on the surface of the wafer 10,201 to which chips 11 are bonded to form a hybrid monolithic wafer system. The wafer 10 is packaged within a wafer package, and the packaging system utilizes a header 20 which is a flexible circuit connector between the wafer package and first level circuit board 30.</p> |
