Schottky junction semiconductor device for microwave amplification and fast logic circuits, and method of making the same.

摘要

The device is of the type containing: a lower electrode (2), forming either emitter or source, or forming collector or drain; a central control electrode (21, 25), forming base or gate; and an upper electrode (4), forming either collector or drain, or forming emitter or source, respectively, a semiconductor material (3) being arranged between the upper electrode and the lower electrode, and the control electrode being configured within this material as a plurality of adjacent conductive fingers defining, in the transverse gap separating them, at least one semiconductor channel (8) extending vertically between the upper electrode and the lower electrode and the conduction of which is controlled by the bias of the control electrode.
<??>According to the invention, the region, at right angles to the fingers, situated between the control electrode (21, 25) and the lower electrode (2) comprises an insulating material (20), so as to reduce the parasitic capacitance between control electrode and lower electrode.
<??>Very advantageously, with the fingers of the control electrode (21, 25) each comprising a conductive deposition (25) at the bottom of a respective trench (7) hollowed out of the said semiconductor material and with the sides of this trench being covered with a layer of passivation material (23), a gap (27) with low dielectric constant, in particular consisting of a transverse region devoid of material, is provided between the said trench sides and the sides of the said conductive deposition, in such a way as to reduce any parasitic operating of the device by the trench sides.
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