| 摘要 |
PURPOSE:To control the maximum particle diameter and to increase the product of dielectric constant and dielectric breakdown voltage per thickness by roasting the blended material of metallic oxides having specified composition and forming semiconductor porcelain and insulating its grain boundary by a specified compd. CONSTITUTION:Raw materials are blended so that the tile composition is shown by the general formula (Sr1-x-zBaxCazMy) TiO3+mN+nZ wherein M is at least one kind from Nb, Ta, W and rare earth elements, N is at least one kind from Mn, Al and Si and Z is one or both of Pb and B. The range of the composition is shown in the following expressions. 0.0001<=x<=0.05, 0.001<=y<=0.03, 0<=z<=0.30, 0.990<=l<=1.010, 0.0001<=m<=0.01, 0.01<=n<=0.03 Semiconductor porcelain is obtained by calcining and grinding this blended material and molding the ground material and roasting this molded body. The surface of this semiconductor porcelain is applied with paste of a compd. contg. at least one kind from Cu, Bi, Pd, B and Si. The grain boundary is insulated by thermally diffusing this paste. Thereby the maximum particle diameter is controlled to 50-80mum. |
