发明名称 |
Semiconductor substrate and method for producing the same |
摘要 |
A semiconductor substrate that comprises: a base plate member made from a dielectric material; a refractory metal film covering at least a part of the base plate member; a single crystal semiconductor film formed on the refractory metal film; and an impurities-diffusion layer formed in said single crystal semiconductor film in a side contacting with the refractory metla film. The diffusion layer has a density grade gradually decreasing toward a direction away from the refractory metal film so that this impurities-diffusion layer comes in ohmic contact with the refractory metal film.
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申请公布号 |
US5073815(A) |
申请公布日期 |
1991.12.17 |
申请号 |
US19900570426 |
申请日期 |
1990.08.21 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
KOSAKA, DAISUKE;KONISHI, JUNICHI |
分类号 |
H01L21/20;H01L21/285;H01L21/336;H01L27/00;H01L27/12;H01L29/41;H01L29/78;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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