| 摘要 |
PURPOSE:To obtain an integrated light source capable of carrying out high density wave length multi-transmission by forming an optical waveguide which guides laser light from a semiconductor laser to a modulator and a field absorption type semiconductor optical modulator where the absorption characteristic of light varies with a single axis mode semiconductor laser and voltage application on the same substrate. CONSTITUTION:Four wavelength variable DBR lasers which comprise an active region 201, a phase control region 202, and a DBR region 203, are arrayed on a semiconductor substrate 100 where a field absorption type modulator 300 is formed, which adjoins the DBR region 203 of the DBR laser. The light output from the modulator 300 is adapted to synthesize its waves. Wave synthesizers 400 are integrated on the same substrate. The average oscillation threshold current of four devices, which oscillate in a single axis mode near the wavelength of 1.55mum by injecting current to the active layer active region, turns to 25mA and the oscillation wavelength is controlled by injecting electric current into the phase control region 202 and the DBR control region 203 so that its width may range 60Angstrom to 90Angstrom . |
