| 摘要 |
PURPOSE:To carry out the high temp. heat treatment for semiconductor, etc., without being contaminated by heavy metal by coating at least the inner surface or all surfaces of pipe or jig consisting of silicon carbide with silicon nitride. CONSTITUTION:At least the inner surface of a silicon carbide pipe used for heat treatment of semiconductor or all surfaces of a silicon carbide jig are coated with silicon nitride. This silicon nitride coating is formed on a surface by the thermochemical reaction carried out in such a way that a pipe or jig is heated on which gaseous silane or gaseous ammonia is passed. This material of silicon nitride has an excellent barrier effect against the dispersion of heavy metal contaminants and, by using the pipe or the jig having this effect, a semi conductor wafer is treated at high temp. for a long period without the contami nation due to heavy metals. |
