| 摘要 |
PURPOSE:To obtain a high photoelectric conversion rate by aligning and laminating three solar cells, and burying an intermediate electrode at least at one side between a GaAlAs solar cell and a GaAs solar cell or between the GaAs solar cell and a Ge solar cell. CONSTITUTION:A Ge pin junction solar cell 21, a GaAs pn junction solar cell 22 and a GaAlAs pn junction solar cell 23 are laminated by sequentially epitaxially growing on a Ge substrate 14. An intermediate electrode 10 is buried between the cell 21 of first stage and the cell 22 of second stage, and an intermediate electrode 6 is buried between the cell 22 of second stage and the cell 23 of third stage. Lattice constant difference between the cells 21 and 22 of the first and second stages and between the cells 22 and 23 of the second and third stages are both 0.1% or less, and the lattice constants are substantially coincident. Thus, an epitaxial layer of high quality can be grown to perform a high efficiency. |
