| 摘要 |
PURPOSE:To form a thin dielectric film which provides high dielectric constant and is superior in bias characteristics by using the thin film of an antiferrodielectric perovskite type oxide. CONSTITUTION:Organic acid chlorides containing each metal ion, e.g. Pb, La, Zr, Ti and inorganic salt or organic metallic compounds such as metal alkoxide are used as starting materials and a material solution is prepared by mixing the above materials so that a metal ion ratio may satisfy the composition of an expression: (Pb1-xLax) (ZryTi1-y)1-x/4O3 where each x and y represents values within a region indicated by oblique lines in an attached x-y relational diagram and its material solution is applied to a substrate. In such a case, it is permissible to regulate viscosity by adding water or catalyst to the solution containing metal ions as occasion demands. Then the thin film of a perovskite type oxide equipped with a preferable composition in such a way that each value x and y is within the region indicated by the oblique lines in the attached diagram is obtained by performing burning or heat treatment at the temperature of 500 deg.C or higher for a film applied on the substrate. |
