| 摘要 |
PURPOSE:To effectively eliminate noises caused by an inductive component by a method wherein one or more capacitors are provided in both a semiconductor integrated circuit element which operates at a frequency of 1GHz or above and an outer mechanism respectively. CONSTITUTION:A capacitor composed of an upper Al electrode 20, a tantalum pentoxide layer 21, and a lower Al electrode 22 is provided onto a switching section in a silicon wafer or gates 23. To prevent a semiconductor integrated circuit device from decreasing in switching speed, a low dielectric constant layer 33 formed of silicon oxide is formed comparatively thick or as thick as 3mum. The dielectric of the capacitor concerned is formed of tantalum pentoxide large enough in dielectric constant and small enough in dielectric loss at a frequency of 1GHz. the dielectric concerned is formed as thick as 100nm or so, so that a capacitor large enough or 0.05muF in capacitance can be secure in a silicon chip 5mm square in size. A capacitor large enough or 0.5muF in capacitance is arranged outside the silicon chip to shut off all noises other than those induced by an inductive component in the silicon chip. |
