| 摘要 |
PURPOSE:To protect a compound layer and a solar cell against cracks and chipping at the welding of an outer connecting piece by a method wherein an N electrode is formed on a part of the first primary surface of an Si substrate where a compound semiconductor layer has been removed, and the outer connecting piece is connected to the N electrode. CONSTITUTION:Compound semiconductor layers larger than an Si substrate in thermal expansion coefficient such as an N-type GaAs layer 2, a P-type GaAs layer 3, a P-type AlGaAs layer 4, and others are successively deposited on the N-type Si substrate, and then an antireflection film 5 of tantalum pentoxide or the like is deposited. Regions 1aa and 1ab where a P-side electrode and an N-side electrode are formed respectively are provided, an insulating film 8 is formed on the P-side electrode forming region 1aa, and a contact hole is provided to a P-side electrode forming side reaching to the P-type GaAs layer 3 through etching and electrically connected. A part of it forms a P-electrode 6 which is provided to the region 1aa of the first primary surface of the Si substrate 1 where the GaAs layer has been removed through intermediary of an insulating film 8, and furthermore an N electrode 7 is formed on the region 1ab of the first primary face of the Si substrate 1 where the GaAs layer has been removed. Lastly, an outer connecting piece 9 is connected to the prescribed part of each of the electrodes 7 and 8, and thus a solar cell 10 is finished. |
