| 摘要 |
PURPOSE:To simplify manufacture by forming a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type to which impurities with high concentration have been added on a substrate, etching out a part of the second semiconductor layer except an island region corresponding to a light emitting diode forming region and forming PN junction with the island region as a diffusion source. CONSTITUTION:An N-type GaAs layer 2 with concentration of 5X10<17>/cm<3>, an Al0.3Ga0.7As layer 3 with concentration of 5X10<17>/cm<3> and a P<+>-type GaAs layer 14 with concentration of 10<20>/cm<3> are laminated on an N-type GaAs substrate 1, the layer 14 is etched to leave only a region corresponding to a light emitting element forming position to have an island region 24 and the other region is removed. Then the region 24 and the layer 3 are covered by a protective film composed of SiNx and heated to form a Zn diffusion region 5 within the layer 2. Then a part covering the region 24 is removed, etching is done to make thickness of the region 24 a predetermined thickness, and a P-side electrode 8 is provided on it via an Al layer 8 and an N-side electrode 9 is provided on the rear face. |
