发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To eliminate troubles due to the driving of a column selection line, which is simultaneous as the operation of a sense amplifier, and to eliminate the influence of a data bus remaining voltage at the time of writing by turning on a read column selection switch at the time of reading and turning on a write column selection switch at the time of writing. CONSTITUTION:Bit lines BL and the inverse of BL, and data buses DB and the inverse of DB are not directly connected and they are connected through transistors Q13 and Q14. The column selection line is divided into read CLR and write CLW. The write column selection line CLW turns on/off transistors Q11 and Q12 which directly connect the bit lines BL and the inverse of BL to the data buses DB and the inverse of DB, and the read column selection line CLR turns on/off transistors Q15 and Q16 controlling the effectiveness/ ineffectiveness of the transistors Q13 and Q14. Thus, there is no trouble even if the column selection lines are driven at the same time as the operation of the sense amplifier SA, and the sense amplifier is prevented from being affected by the data bus remaining voltage at the time of writing.
申请公布号 JPH03283179(A) 申请公布日期 1991.12.13
申请号 JP19900083758 申请日期 1990.03.30
申请人 FUJITSU LTD 发明人 TAGUCHI MASAO
分类号 G11C11/409;G11C7/10;G11C11/4076;G11C11/4096;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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