| 摘要 |
PURPOSE:To obtain a semiconductor memory whose speed is fast and whose operation margin is wide by independently generating word driving signals for respective memory cells. CONSTITUTION:The word driving signals generated in respective word driving signal generation circuits 101, 111,..., and 171 are inputted to row decoders 102, 112,..., and 172 attached to the memory cells 104, 114,..., and 174. At that time, the word driving signals are independently driven for respective memory cells. Thus, influence between the memory cells 104-174 is eliminated. The operation margin of the semiconductor memory can be set wide and the speed can be made fast. |
