| 摘要 |
PURPOSE:To improve the assembling yield of a semiconductor device by adding oxygen plasma treatment and a fluoric acid solution treatment to a substrate formed with metallic electrodes on function regions to clean the front and back surfaces, and then forming back surface electrode, threby enabling preferable bonding. CONSTITUTION:After base electrode 7 and emitter electrode 8 contacted with diffused regions 2, 3 are formed of aluminm or the like in the step of manufacturing, for example, a bipolar transistor, a wafer 1 is treated in oxygen plasma. After organic material adhered on the surfaces of the electrodes 7, 8 is removed with this treatment, it is treated with fluoric acid to remove an oxidized film formed on the back surface, and a collector electrode 10 is formed. Thus, the electrode 10 can be formed without intermediary of contaminant, and the surfaces of the electrodes 7, 8 are cleaned, thereby enabling the preferable wire bonding. |
