发明名称 RESIST MATERIAL
摘要 PURPOSE:To provide the resist material which has a high sensitivity to far UV light and to enhance the resolution thereof by introducing a dihydroxybenzene deriv. into a novolak resin synthesized from cresol and formalin at 1:1 to 1:4 and chemically bonding a diazo compd. directly to the novolak resin. CONSTITUTION:This resist material is mainly composed of the novolak resin which has 1:1 to 1:4 molar ratio of the cresol and the formation and contains the dihydroxybenzene deriv. The diazo compd. is chemically bonded to the phenolic hydroxyl group of the novolak resin. Branched structures are introduced into the resin by forming the resin contg. the excessive formalin. The cresol of the branched parts is liable to react with an alkali and the resin is liable to be developed. The deterioration in the resist shape is obviated when the resin and the cyan compd. are chemically bonded. Further, the transmissivity and the dissolution rate in a developer are increased and the resist sensitivity is improved by introducing the dihydroxybenzene deriv. into the resin.
申请公布号 JPH03282548(A) 申请公布日期 1991.12.12
申请号 JP19900083796 申请日期 1990.03.30
申请人 SONY CORP 发明人 NOGUCHI TSUTOMU;TOMITA HIDEMI
分类号 G03F7/021;H01L21/027 主分类号 G03F7/021
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