| 摘要 |
A method for forming a superconductor film on a semiconductor substrate employs masking a substrate slab (10) into regions (14) to have the superconductor film deposited therein, depositing the superconductor material within said regions, masking the substrate slab upper surface outside of the regions with reflective material (18), and heating the superconductor material with radiant energy to a temperature desired for forming the superconducting phase. The semiconductor slab outside of the superconducting region is maintained at a relatively low temperature by reflection of the incident energy by the reflective material. After radiant heating of the superconductor material, the reflective material is removed and the substrate may be further processed. |
