| 摘要 |
<p>PURPOSE:To form uniform resist patterns even if a photoresist is simultaneously subjected to exposing by forming the element patterns provided on a photomask to the pattern width in the positions corresponding to groove parts or steps larger than the pattern width in the position corresponding to the plane surfaces of a substrate according to the depth of the grooves. CONSTITUTION:The positive type photoresist 3 is applied over the entire surface of the element mounting surface 2 of the substrate 1 and thereafter, the photomask 4 is disposed on the substrate 1. The photoresist is subjected to the exposing processing via the photomask 4 then to development processing, by which the resist patterns 7, 7... having the uniform width size are obtd. The shape of the element patterns of the photomask 4 is formed from rectangular parts 6A, 6B and a projecting curved part 6C and, therefore, the resist is so exposed that the pattern width is smaller at the places of the deeper spacing H2 by the spreading of the exposing light. The patterns 7 are thus formed as the patterns uniform on all of the flat planes 2A, 2B, 2C of the mounting surface 2.</p> |
