| 摘要 |
PURPOSE:To synthesize an aluminum oxynitride film at relatively low temp. by discharging a gaseous mixture of an Al halide, a gas containing nitrogen atoms, and a gas containing oxygen atoms by means of microwave and forming this gaseous mixture into plasmic state. CONSTITUTION:An Al halide, such as AlBr3, an N2 gas, and a gas containing oxygen atoms, such as N2O, are mixed. The resulting gaseous mixture is discharged by means of microwave and formed into plasmic state. As a result, combinations of molecular radicals are allowed to exist, and further, atomic radicals branched into respective elements are formed. These are allowed to react at the surface of a substrate, by which a thin film of aluminum oxynitride (AlxOyNz) can be formed. Aluminum oxynitride in amorphous state can be deposited by setting the supply flow rates of N2O gas and H2 gas at proper values, and further, the distribution ratio between N and O in the aluminum oxynitride synthesized can be arbitrarily changed by changing the flow rate of H2O gas and refractive index can be set up. |
