| 摘要 |
<p>PURPOSE:To allow faithful pattern transfer at a specified quantity of light by etching a 1st film with a photosensitive layer as a mask, then depositing a 2nd film, allowing the film to remain in self-alignment on the side parts of mask patterns by anisotropic etching and etching the substrate with the self- aligned films and mask patterns as a mask. CONSTITUTION:A chromium thin film is deposited on the surface of a light transparent quartz substrate 1 and after the chromium mask 2 is patterned, silicon nitride Si3N4 5 is deposited over the entire surface of the quartz substrate 1 and the chromium mask 2. A positive resist 6 is applied thereon. The positive resist 6 is patterned at the same patterns as the patterns of the chromium mask 3 when the positive resist is irradiated with light from the rear surface of the quartz glass with the chromium 2 as a light shielding film and is developed. The nitride film 6 is thereafter removed by the anisotropic etching with the positive resist 6 as a mask and silicon nitride Si3N4 7 is deposited over the entire surface. The exposed quartz substrate 1 is then subjected to the anisotropic etching down to a prescribed depth with the nitride film Si3N4 5 as a mask. The faithful pattern transfer is executed at the specified light quantity in this way.</p> |
