| 摘要 |
PURPOSE:To obtain a compact and high-performance photoelectric transducer, by providing on the same substrate a photodiode formed from a CdS polycrystalline film and a CdTe polycrystalline film and a diode formed from a CdS polycrystalline film and a Te polycrystalline film. CONSTITUTION:On a glass substrate 1, CdS films 2-4 are provided at given intervals by means of evaporation, and a CdTe film 5 is formed so as to overlap with a part thereof. Moreover, a Te film 6 is formed so as to overlap with a part of each of the films 5 and 3, and a Te film 7 is formed so as to overlap with a part of the film 4. Evaporated films 8-10 of In-Sn alloy are formed on the exposed parts of the films 2-4 and 7. The Te 6 becomes an electrode and acceptor with respect to the CdTe 5, forming a photodiode between the CdS 2 and the CdTe 5. In addition, the Te 6, 7 form diodes with the CdS 3, 4 as well as connect the photodiodes to each other. By said constitution, it is possible to obtain the photoelectric transducer which is highly sensitive in a wavelength range, 520-850nm, and also has high frequency responce characteristics, and an original can be read at a high speed without any lens by employing red LEDs. |
