| 摘要 |
<p>PURPOSE:To obtain the electrooptical device which has no photoelectric effect, has a sufficient driving margin and is stable and highly reliable by incorporating substantially no hydrogen into a nonlinear resistance thin film a-SiNxOy and specifying N/Si=0.6 to 0.8 and O/Si=0 to 0.2. CONSTITUTION:The a-SiNxOy film 14 of the nonlinear resistance element 15 is so formed that the film contains substantially no H and has N/Si=0.6 to 0.8 and O/Si=0 to 0.2. Namely, the photoelectric effect is eliminated and the degradation in the contrast of the electrooptical device in a bright place is prevented by forming the a-SiNxOy film 14 so as to contain substantially no H. The electrooptical device having the sufficiently large driving margin is obtd. if the film is formed to have N/Si=0.6 to 0.8 and O/Si=0 to 0.2. In addition, a change in the electric characteristics considered to be caused by the H when the device is driven for a long period of time is prevented. The electrooptical device which is stable and highly reliable is obtd. in this way.</p> |
