Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same.

摘要

A thin film of SiO2 is patterned on an N layer consisting of N-type A l xGa1-xN (inclusive of x = 0). Next, I-type A l xGa1-xN (inclusive of x = 0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.