MANUFACTURE OF MOS TRANSISTOR,申请号JP19900079904-传众专利搜索

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发明名称	MANUFACTURE OF MOS TRANSISTOR
摘要
申请公布号	JPH03280422(A)	申请公布日期	1991.12.11
申请号	JP19900079904	申请日期	1990.03.28
申请人	NEC CORP	发明人	SUGIYAMA TOSHIAKI
分类号	H01L21/336;H01L21/265;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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