FORMATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYER,申请号JP19900081704-传众专利搜索

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发明名称	FORMATION OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON LAYER
摘要
申请公布号	JPH03280530(A)	申请公布日期	1991.12.11
申请号	JP19900081704	申请日期	1990.03.29
申请人	SONY CORP	发明人	KIYOTA HISAHARU
分类号	H01L21/22	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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