| 摘要 |
PURPOSE:To suppress a short channel and a narrow channel effect so as to enable a memory device to be micronized by a method wherein the memory device is formed of a grooved type MOSFET composed of a source diffusion layer, a drain diffusion layer, a gate insulating film formed in a groove provided to a substrate, and a gate electrode buried in the groove concerned. CONSTITUTION:An N-type diffusion layer 13 is formed in a memory cell region isolated by an element isolation insulating film 12 on a P-type Si substrate 11, and a trench 14 and a groove 15 are provided to the N-type diffusion layer 13. A storage anode electrode 17, a capacitor insulating film 18, and a plate electrode 19 are buried in the trench 14 through the intermediary of a silicon oxide film 19 to constitute a buried stacked capacitor. The groove 15 is provided to a transistor region, and a gate electrode 21 is buried in e groove 15 through the intermediary of a gate insulating film 20 to constitute a grooved type MOSFET. Therefore, a source and a drain diffusion layer are effectively lessened in area, so that a semiconductor memory device of this design has a structure high in resistance to a short channel effect. |
