Resist composition and process for forming resist pattern thereby.

摘要

A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): wherein, R1 means CH3 , CF3 , CN, CH2OH, or CH2CO2R, wherein R means an alkyl having 1 to 5 carbon atoms R2 means a hydrocarbon radical having at least one Si, R3 means OH, O-C(CH3), NH2 , or NHCH2OH, and, a ratio of n to m is more than 0 and is 1 or less than 1. Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.