| 摘要 |
PURPOSE:To eliminate corrosion of a part used as an interconnection even when aluminum at an empty pad part is corroded and to prevent a problem such as a disconnection of the like from being caused by a method wherein the interconnection which connects adjacent bonding pads is provided between both bonding pads and the interconnection is formed of an interconnection layer other than the outermost layer of a multilayer interconnection. CONSTITUTION:At a bonding pad structure formed of a single metal layer or of a plurality of metal layers of a semiconductor device having a multilayer interconnection structure, an interconnection 3' which connects adjacent bonding pads is provided between both bonding pads and the interconnection 3' is formed of an interconnection layer 3 other than the outermost layer 6 of a multilayer interconnection. For example, when a first aluminum layer 3 as one part of a bonding pad is formed, a pad bridge 3' is formed simultaneously. Then, an interlayer insulating film 4 is formed; a via hole 5 is made. At this time, the via hole 5 is not made at an empty pad part. Then, a second aluminum layer 6 is formed; a passivation film 8 is grown on the whole surface; after that, a cover hole 9 is made; a pad part which must be connected is bonded. |
